GTO snubber capacitor ka thepa ea elektroniki ea matla

Tlhaloso e Khutšoanyane:

Li-circuits tsa li-snubber li bohlokoa bakeng sa li-diode tse sebelisoang ho fetola li-circuits.E ka boloka diode ho li-spikes tsa overvoltage, tse ka hlahang nakong ea ts'ebetso ea ho khutlisa.

Re romelle lengolo-tsoibila Khoasolla joalo ka PDF

Lintlha tsa Sehlahisoa

Li-tag tsa Sehlahisoa

Lintlha tsa tekheniki

Boemo ba mocheso o sebetsang	Max.Mocheso oa ho sebetsa.,Holimo,max: + 85℃Mocheso o ka holimo oa sehlopha: +85℃Mocheso o ka tlaase oa sehlopha: -40℃
sebaka sa bokhoni	0.22 ~ 3μF
Matla a lekantsoeng	3000V.DC～10000V.DC
Cap.tol	±5%(J) ;±10%(K)
E mamella voltage	1.35Un DC/10S
Ntho ea ho senya	tgδ≤0.001 f=1KHz
Insulation resistance	C≤0.33μF RS≥15000 MΩ (ho 20℃ 100V.DC 60S) C＞0.33μF RS*C≥5000S (ho 20℃ 100V.DC 60S)
Hanela seteraeke	sheba setlankana
Tebello ya bophelo	100000h(Un; Θhotspot≤70°C)
Reference standard	IEC 61071 ;

Sebopeho

1. Teipi ea Mylar, E Tiisitsoeng ka resin;

2. Lieta tsa linate tsa koporo;

3. Ho hanyetsa motlakase o phahameng, tgδ e tlaase, ho phahama ha mocheso o tlaase;

4. ESL e tlaase le ESR;

5. High pulse Current.

Kopo

1. GTO Snubber.

2. E sebelisoa haholo ka thepa ea elektronike ea matla ha tlhōrō ea motlakase, tlhōrō ea ts'ireletso ea hona joale ea ho monya.

Potoloho e tloaelehileng

Ho taka setšoantšo

Tlhaloso

Un=3000V.DC
Bokhoni (μF)	φD (mm)	L(mm)	L1(mm)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Li-Irms(A)
0.22	35	44	52	25	1100	242	30
0.33	43	44	52	25	1000	330	35
0.47	51	44	52	22	850	399	45
0.68	61	44	52	22	800	544	55
1	74	44	52	20	700	700	65
1.2	80	44	52	20	650	780	75
1.5	52	70	84	30	600	900	45
2.0	60	70	84	30	500	1000	55
3.0	73	70	84	30	400	1200	65
4.0	83	70	84	30	350	1400	70
Un=6000V.DC
Bokhoni (μF)	φD (mm)	L(mm)	L1(mm)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Li-Irms(A)
0.22	43	60	72	25	1500	330	35
0.33	52	60	72	25	1200	396	45
0.47	62	60	72	25	1000	470	50
0.68	74	60	72	22	900	612	60
1	90	60	72	22	800	900	75

Un=7000V.DC
Bokhoni (μF)	φD (mm)	L(mm)	L1(mm)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Li-Irms(A)
0.22	45	57	72	25	1100	242	30
0.68	36	80	92	28	1000	680	25
1.0	43	80	92	28	850	850	30
1.5	52	80	92	25	800	1200	35
1.8	57	80	92	25	700	1260	40
2.0	60	80	92	23	650	1300	45
3.0	73	80	92	22	500	1500	50

Un=8000V.DC
Bokhoni(μF)	φD (mm)	L(mm)	L1(mm)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Li-Irms(A)
0.33	35	90	102	30	1100	363	25
0.47	41	90	102	28	1000	470	30
0.68	49	90	102	28	850	578	35
1	60	90	102	25	800	800	40
1.5	72	90	102	25	700	1050	45
2.0	83	90	102	25	650	1300	50

Un=10000V.DC
Bokhoni (μF)	φD (mm)	L(mm)	L1(mm)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Li-Irms(A)
0.33	45	114	123	35	1500	495	30
0.47	54	114	123	35	1300	611	35
0.68	65	114	123	35	1200	816	40
1	78	114	123	30	1000	1000	55
1.5	95	114	123	30	800	1200	70