Fektheri e rekisoang ka ho chesa Snubber Bakeng sa Thyristor e Matla a Phahameng - Moralo oa maemo a holimo oa IGBT Snubber capacitor bakeng sa lits'ebetso tse phahameng tsa matla - CRE

Snubber e rekisoang ka ho chesa bakeng sa Thyristor e Matla a Phahameng - Moralo oa maemo a holimo oa IGBT Snubber capacitor bakeng sa lits'ebetso tse phahameng tsa matla - CRE Featured Image

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Fektheri e rekisoang ka ho chesa Snubber Bakeng sa Thyristor e Matla a Phahameng - Moralo oa maemo a holimo oa IGBT Snubber capacitor bakeng sa lits'ebetso tse phahameng tsa matla - Lintlha tsa CRE:

Lintlha tsa tekheniki

Boemo ba mocheso o sebetsang	Mocheso o phahameng oa ho sebetsa.,Holimo,max: +105℃ Mocheso o ka holimo oa sehlopha: +85 ℃ Mocheso o ka tlase oa sehlopha: -40 ℃
sebaka sa bokhoni	0.1μF～5.6μF
Matla a lekantsoeng	700V.DC～3000V.DC
Cap.tol	±5%(J);±10%(K)
E mamella voltage	1.5Un DC/10S
Ntho ea ho senya	tgδ≤0.0005 C≤1μF f=10KHz tgδ≤0.001 C≥1μF f=10KHz
Insulation resistance	C≤0.33μF RS≥15000 MΩ (at20℃ 100V.DC 60S) C＞0.33μF RS*C≥5000S(at20℃ 100V.DC 60S)
Hanela seteraeke	sheba setlankana
Ho lieha ha lelakabe	UL94V-0
Tebello ya bophelo	100000h(Un; Θhotspot≤85°C)
Reference standard	IEC61071;GB/T17702;

Tafole ea lintlha

Palo ea li-volts	Un 700V.DC,Urms400Vac;Us1050V
	Boemo (mm)
Cn(μF)	L(±1)	T(±1)	H(±1)	ESR @100KHz (mΩ)	ESL(nH)	dv/dt (V/μS)	Ipk(A)	Irms @40℃ @100KHz (A)
0.47	42.5	24.5	27.5	12	25	500	235	8
0.68	42.5	24.5	27.5	10	25	480	326.4	10
1	42.5	24.5	27.5	8	24	450	450	12
1.5	42.5	33.5	35.5	7	25	430	645	5
2	42.5	33	35.5	6	24	420	840	15
2.5	42.5	33	45	6	23	400	1000	18
3	42.5	33	45	5.5	22	380	1140	20
3	57.5	30	45	5	26	350	1050	22
3.5	42.5	33	45	5	23	350	1225	25
3.5	57.5	30	45	6	25	300	1050	22
4.7	57.5	35	50	5	28	280	1316	25
5.6	57.5	38	54	4	30	250	1400	25
6	57.5	38	54	3.5	33	230	1380	28
6.8	57.5	42.5	56	3.2	32	220	1496	32
8	57.5	42.5	56	2.8	30	200	1600	33
Palo ea li-volts	Un 1000V.DC,Urms500Vac;Us1500V
	Boemo (mm)
Cn(μF)	L(±1)	T(±1)	H(±1)	ESR(mΩ)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Li-Irms
0.47	42.5	24.5	27.5	11	25	1000	470	10
0.68	42.5	24.5	27.5	8	25	800	544	12
1	42.5	33.5	35.5	6	24	800	800	15
1.5	42.5	33	45	6	24	700	1050	15
2	42.5	33	45	5	22	700	1400	20
2.5	57.5	30	45	5	30	600	1500	22
3	57.5	35	50	4	30	600	1800	25
3.3	57.5	35	50	3.5	28	550	1815	25
3.5	57.5	38	54	3.5	28	500	1750	25
4	57.5	38	54	3.2	26	500	2000	28
4.7	57.5	42.5	56	3	25	420	1974	30
5.6	57.5	42.5	56	2.8	24	400	2240	32
Palo ea li-volts	Un 1200V.DC,Urms550Vac;Us1800V
Cn(μF)	L(±1)	T(±1)	H(±1)	ESR(mΩ)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Li-Irms
0.47	42.5	24.5	27.5	11	24	1200	564	10
0.68	42.5	33.5	35.5	7	23	1100	748	12
1	42.5	33.5	35.5	6	22	800	800	14
1.5	42.5	33	45	5	20	800	1200	15
2	57.5	30	45	4	30	750	1500	20
2.5	57.5	35	50	4	28	700	1750	25
3	57.5	35	50	4	27	600	1800	25
3.3	57.5	38	54	4	27	550	1815	28
3.5	57.5	38	54	3.5	25	500	1750	28
4	57.5	42.5	56	3.5	25	450	1800	30
4.7	57.5	42.5	56	3.2	23	420	1974	32
Palo ea li-volts	Un 1700V.DC,Urms575Vac;Us2250V
Cn(μF)	L(±1)	T(±1)	H(±1)	ESR(mΩ)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Li-Irms
0.33	42.5	24.5	27.5	12	25	1300	429	9
0.47	42.5	24.5	27.5	10	24	1300	611	10
0.68	42.5	33.5	35.5	8	23	1300	884	12
1	42.5	33	45	7	22	1200	1200	15
1.5	42.5	33	45	6	22	1200	1800	18
1.5	57.5	30	45	5	31	1200	1800	20
2	57.5	30	45	5	30	1100	2200	22
2.5	57.5	35	50	4	28	1100	2750	25
3	57.5	38	54	4	27	700	2100	25
3.3	57.5	38	54	3.8	26	600	1980	28
3.5	57.5	42.5	56	3.5	25	500	1750	30
4	57.5	42.5	56	3.2	25	450	1800	32
Palo ea li-volts	Un 2000V.DC,Urms700Vac;Us3000V
Cn(μF)	L(±1)	T(±1)	H(±1)	ESR(mΩ)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Li-Irms
0.22	42.5	24.5	27.5	15	25	1500	330	10
0.33	42.5	33.5	35.5	12	24	1500	495	12
0.47	42.5	33.5	35.5	11	23	1400	658	15
0.68	42.5	33	45	8	22	1200	816	18
0.68	57.5	30	45	7	30	1100	748	20
0.82	42.5	33	45	7	28	1200	984	22
1	57.5	30	45	6	28	1100	1100	25
1.5	57.5	35	50	5	25	1000	1500	28
2	57.5	38	54	5	24	800	1600	28
2.2	57.5	42.5	56	4	23	700	1540	32
Palo ea li-volts	Un 3000V.DC,Urms750Vac;Us4500V
Cn(μF)	L(±1)	T(±1)	H(±1)	ESR(mΩ)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Li-Irms
0.15	42.5	33	45	18	28	2500	375	25
0.22	42.5	33	45	15	27	2200	484	28
0.22	57.5	35	50	15	25	2000	330	20
0.33	57.5	35	50	12	24	1800	495	20
0.47	57.5	38	54	11	23	1600	752	22
0.68	57.5	42.5	56	8	22	1500	1020	28

Litšoantšo tsa lintlha tsa sehlahisoa:

Tataiso e Amanang ea Sehlahisoa:

Re natefeloa ke maemo a matle haholo har'a litebello tsa rona bakeng sa thepa ea rona ea boleng bo holimo, theko ea tlholisano le ts'ebeletso e nepahetseng bakeng sa Snubber e rekisoang e chesang e rekisoang For High Powered Thyristor - Moralo oa maemo a holimo oa IGBT Snubber capacitor bakeng sa lits'ebetso tsa matla a phahameng - CRE, Sehlahisoa. e tla fana ka lefats'e ka bophara, joalo ka: Seychelles, Manchester, Brasilia, Sehlopha sa rona sa boenjiniere ba litsebi se tla lula se ikemiselitse ho u sebeletsa bakeng sa lipuisano le maikutlo.Re boetse re khona ho u fa lisampole tsa mahala ho fihlela litlhoko tsa hau.Maiteko a matle ka ho fetisisa a tla hlahisoa ho u fa litšebeletso le thepa e nepahetseng.Bakeng sa mang kapa mang ea nahanang ka k'hamphani le thepa ea rona, etsa bonnete ba hore o ikopanya le rona ka ho re romella mangolo-tsoibila kapa ho ikopanya le rona kapele.E le mokhoa oa ho tseba lihlahisoa tsa rona le tse tiileng.tse ling tse ngata, u ka tla fekthering ea rona ho tla tseba.Re tla lula re amohela baeti ba tsoang lefats'eng lohle ho tla khoebong ea rona ho theha likamano tsa khampani le rona.Etsa bonnete ba hore u ikutloa u lokolohile ho ikopanya le rona bakeng sa khoebo 'me re lumela hore esale re ikemiselitse ho arolelana boiphihlelo bo holimo ba khoebo le barekisi bohle ba rona.

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Boikutlo ba tšebelisano ea mofani oa thepa bo botle haholo, bo kopane le mathata a sa tšoaneng, kamehla bo ikemiselitseng ho sebelisana le rōna, ho rōna joaloka Molimo oa sebele.